JPS50106565A - - Google Patents

Info

Publication number
JPS50106565A
JPS50106565A JP49005978A JP597874A JPS50106565A JP S50106565 A JPS50106565 A JP S50106565A JP 49005978 A JP49005978 A JP 49005978A JP 597874 A JP597874 A JP 597874A JP S50106565 A JPS50106565 A JP S50106565A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49005978A
Other languages
Japanese (ja)
Other versions
JPS5631898B2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP597874A priority Critical patent/JPS5631898B2/ja
Priority to US05/538,315 priority patent/US3984859A/en
Priority to DE2500775A priority patent/DE2500775C3/de
Publication of JPS50106565A publication Critical patent/JPS50106565A/ja
Publication of JPS5631898B2 publication Critical patent/JPS5631898B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP597874A 1974-01-11 1974-01-11 Expired JPS5631898B2 (en])

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP597874A JPS5631898B2 (en]) 1974-01-11 1974-01-11
US05/538,315 US3984859A (en) 1974-01-11 1975-01-03 High withstand voltage semiconductor device with shallow grooves between semiconductor region and field limiting rings with outer mesa groove
DE2500775A DE2500775C3 (de) 1974-01-11 1975-01-10 Hochspannungsfestes planeres Halbleiterbauelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP597874A JPS5631898B2 (en]) 1974-01-11 1974-01-11

Publications (2)

Publication Number Publication Date
JPS50106565A true JPS50106565A (en]) 1975-08-22
JPS5631898B2 JPS5631898B2 (en]) 1981-07-24

Family

ID=11625914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP597874A Expired JPS5631898B2 (en]) 1974-01-11 1974-01-11

Country Status (3)

Country Link
US (1) US3984859A (en])
JP (1) JPS5631898B2 (en])
DE (1) DE2500775C3 (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134938A (en) * 1981-02-13 1982-08-20 Mitsubishi Electric Corp Semiconductor device
JPS6353969A (ja) * 1986-08-22 1988-03-08 Fuji Electric Co Ltd 半導体素子

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2633324C2 (de) * 1976-07-24 1983-09-15 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum Herstellen von Halbleiterbauelementen hoher Sperrspannungsbelastbarkeit
US4131910A (en) * 1977-11-09 1978-12-26 Bell Telephone Laboratories, Incorporated High voltage semiconductor devices
CH633907A5 (de) * 1978-10-10 1982-12-31 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement mit zonen-guard-ringen.
JPS5936430B2 (ja) * 1980-01-17 1984-09-04 株式会社東芝 半導体装置
US5244827A (en) * 1991-10-31 1993-09-14 Sgs-Thomson Microelectronics, Inc. Method for planarized isolation for cmos devices
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
GB2314206A (en) * 1996-06-13 1997-12-17 Plessey Semiconductors Ltd Preventing voltage breakdown in semiconductor devices
JP4043226B2 (ja) * 2001-03-30 2008-02-06 三菱電機株式会社 半導体装置
JP2010062377A (ja) * 2008-09-04 2010-03-18 Sanyo Electric Co Ltd 半導体装置及びその製造方法
DE102011112659B4 (de) * 2011-09-06 2022-01-27 Vishay Semiconductor Gmbh Oberflächenmontierbares elektronisches Bauelement
US9048106B2 (en) * 2012-12-13 2015-06-02 Diodes Incorporated Semiconductor diode assembly
US9831144B2 (en) * 2013-08-28 2017-11-28 Qubeicon Ltd. Semiconductor die and package jigsaw submount

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5069974A (en]) * 1973-09-25 1975-06-11
JPS5242634A (en) * 1975-10-01 1977-04-02 Yasutsune Ikenaga Wave eliminating block

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
GB1078273A (en) * 1964-10-19 1967-08-09 Sony Corp Semiconductor device
DE1439737B2 (de) * 1964-10-31 1970-05-06 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen einer Halblei teranordnung
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
US3506502A (en) * 1967-06-05 1970-04-14 Sony Corp Method of making a glass passivated mesa semiconductor device
US3535774A (en) * 1968-07-09 1970-10-27 Rca Corp Method of fabricating semiconductor devices
US3608186A (en) * 1969-10-30 1971-09-28 Jearld L Hutson Semiconductor device manufacture with junction passivation
US3821782A (en) * 1971-01-14 1974-06-28 J Hutson High voltage semiconductor device with plural grooves
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
US3832246A (en) * 1972-05-22 1974-08-27 Bell Telephone Labor Inc Methods for making avalanche diodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5069974A (en]) * 1973-09-25 1975-06-11
JPS5242634A (en) * 1975-10-01 1977-04-02 Yasutsune Ikenaga Wave eliminating block

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134938A (en) * 1981-02-13 1982-08-20 Mitsubishi Electric Corp Semiconductor device
JPS6353969A (ja) * 1986-08-22 1988-03-08 Fuji Electric Co Ltd 半導体素子

Also Published As

Publication number Publication date
US3984859A (en) 1976-10-05
DE2500775B2 (de) 1979-01-25
DE2500775C3 (de) 1979-09-20
DE2500775A1 (de) 1975-07-17
JPS5631898B2 (en]) 1981-07-24

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